- 111 silicon
- кремній, орієнтований в кристалографічній площині 111
English-Ukrainian dictionary of microelectronics. 2013.
English-Ukrainian dictionary of microelectronics. 2013.
Silicon nitride — Preferred IUPAC name Silicon nitride … Wikipedia
Silicon — Not to be confused with the silicon containing synthetic polymer silicone. aluminium ← silicon → phosphorus C ↑ Si ↓ Ge … Wikipedia
Silicon dioxide — Silica redirects here. For other uses, see Silica (disambiguation). Silicon dioxide … Wikipedia
Hydrogen-terminated silicon surface — A hydrogen terminated silicon surface is a chemically passivated silicon substrate whose native oxide (SiO2) thin film is removed by etching in hydrogen fluoride aqueous solution, leaving the surface silicon atoms covalently bonded to hydrogen.… … Wikipedia
Deal–Grove model — The Deal–Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… … Wikipedia
Deal-Grove model — The Deal Grove model mathematically describes the growth of an oxide layer on the surface of a material. In particular, it is used to analyze thermal oxidation of silicon in semiconductor device fabrication. The model was first published in 1965… … Wikipedia
Etching (microfabrication) — Etching tanks used to perform Piranha, Hydrofluoric acid or RCA clean on 4 inch wafer batches at LAAS technological facility in Toulouse, France Etching is used in microfabrication to chemically remove layers from the surface of a wafer during… … Wikipedia
2001 anthrax attacks — A letter sent to Senate Majority Leader Tom Daschle containing anthrax powder killed two postal workers Location New York … Wikipedia
Silicium — Eigenschaften … Deutsch Wikipedia
Шокли, Уильям Брэдфорд — Уильям Брэдфорд Шокли англ. William Bradford Shockley Шокли в 1975 году Дата рождения: 13 февраля 1 … Википедия
Thermische Oxidation von Silizium — Die thermische Oxidation von Silizium ist in der Halbleitertechnik ein Beschichtungsverfahren, bei dem auf einem einkristallinen Siliziumsubstrat (beispielsweise einem Silizium Wafer) eine dünne Schicht aus amorphen Siliziumdioxid aufgebracht… … Deutsch Wikipedia